Invention Grant
- Patent Title: Semiconductor device with first-in-first-out circuit
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Application No.: US17202144Application Date: 2021-03-15
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Publication No.: US11805638B2Publication Date: 2023-10-31
- Inventor: Seiji Narui , Yuki Ebihara
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C19/08
- IPC: G11C19/08 ; H10B12/00 ; G11C11/4074 ; G11C19/28 ; G06F5/06

Abstract:
Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.
Public/Granted literature
- US20210225848A1 SEMICONDUCTOR DEVICE WITH FIRST-IN-FIRST-OUT CIRCUIT Public/Granted day:2021-07-22
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