- 专利标题: Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure
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申请号: US17349156申请日: 2021-06-16
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公开(公告)号: US11814283B2公开(公告)日: 2023-11-14
- 发明人: Kuei-Sung Chang , Chun-Wen Cheng , Fei-Lung Lai , Shing-Chyang Pan , Yuan-Chih Hsieh , Yi-Ren Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Eschweiler & Potashnik, LLC
- 分案原申请号: US16521907 2019.07.25
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; B81C1/00
摘要:
Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
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