Invention Grant
- Patent Title: Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
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Application No.: US17690107Application Date: 2022-03-09
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Publication No.: US11821068B2Publication Date: 2023-11-21
- Inventor: Bassam Hanna Abraham , Roman Chistyakov
- Applicant: IonQuest Corp.
- Applicant Address: US MA Milford
- Assignee: IonQuest Corp.
- Current Assignee: IonQuest Corp.
- Current Assignee Address: US MA Milford
- Agency: FISHERBROYLES, LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/35 ; C23C14/34 ; C23C16/505 ; H01L21/285 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01J37/32 ; C23C14/00 ; C23C14/06 ; C23C14/14

Abstract:
A magnetically enhanced plasma apparatus includes a hollow cathode target assembly; an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly; a cathode magnet assembly; a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly; an electrode positioned adjacent to the row of magnets behind the gap; a first radio frequency (RF) power supply coupled to the electrode, wherein the electrode is coupled to ground through an inductor; and a second radio frequency (RF) power supply coupled to the hollow cathode target assembly. The second RF power supply ignites and sustains plasma in the hollow cathode target assembly. A frequency and power of the second RF power supply are selected to increase at least one of a degree of dissociation of feed gas molecules and degree of ionization of feed gas atoms. A frequency and power of the first RF power supply are selected to increase a degree of dissociation of feed gas molecules to form a layer from sputtering hollow cathode target material onto a substrate.
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