Invention Grant
- Patent Title: Reduced defect deposition processes
-
Application No.: US17081488Application Date: 2020-10-27
-
Publication No.: US11821082B2Publication Date: 2023-11-21
- Inventor: Xiaoquan Min , Byung Ik Song , Hyung Je Woo , Venkata Sharat Chandra Parimi , Prashant Kumar Kulshreshtha , Kwangduk Lee
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C23C16/44
- IPC: C23C16/44 ; H01J37/32

Abstract:
Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.
Public/Granted literature
- US20210130949A1 REDUCED DEFECT DEPOSITION PROCESSES Public/Granted day:2021-05-06
Information query
IPC分类: