公开(公告)号：US11821082B2

公开(公告)日：2023-11-21

申请号：US17081488

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Byung Ik Song ,  Hyung Je Woo ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  H01J37/32477 ,  H01J37/32862

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

公开(公告)号：US20210130949A1

公开(公告)日：2021-05-06

申请号：US17081488

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Byung Ik Song ,  Hyung Je Woo ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: C23C16/44 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.