公开(公告)号：US20210159107A1

公开(公告)日：2021-05-27

申请号：US16690562

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Hyung Je Woo

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/503 ,  C23C16/505 ,  C23C16/458

Abstract: Embodiments of the present technology may include an electrostatic chuck. The chuck may include a top surface, defining a recessed portion of the chuck. The recessed portion of the chuck may be configured to support a substrate. The chuck may further include a first electrode and a second electrode. The first electrode and the second electrode may be disposed within the chuck. The first electrode and the second electrode may be substantially coplanar. In addition, the chuck may include a third electrode. The third electrode may be disposed within the chuck. Furthermore, the third electrode may have an annular shape. The third electrode may be separated from the first electrode and the second electrode. In addition, the third electrode may be substantially parallel to the first electrode and the second electrode. Systems and methods including the electrostatic chuck are also described.

公开(公告)号：US20210130949A1

公开(公告)日：2021-05-06

申请号：US17081488

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Byung Ik Song ,  Hyung Je Woo ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: C23C16/44 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

公开(公告)号：US11821082B2

公开(公告)日：2023-11-21

申请号：US17081488

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Byung Ik Song ,  Hyung Je Woo ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

IPC: C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  H01J37/32477 ,  H01J37/32862

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

公开(公告)号：US11133212B2

公开(公告)日：2021-09-28

申请号：US16381986

申请日：2019-04-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Jun Ma ,  Hyung Je Woo ,  Fei Wu ,  Jian Li

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.