- 专利标题: Method and apparatus to develop lithographically defined high aspect ratio interconnects
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申请号: US17541162申请日: 2021-12-02
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公开(公告)号: US11822249B2公开(公告)日: 2023-11-21
- 发明人: Pooya Tadayon
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Essential Patents Group, LLP
- 分案原申请号: US15857308 2017.12.28
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; H01L27/00 ; G03F7/30 ; B05C3/04
摘要:
Disclosed is a method to develop lithographically defined high aspect ratio interconnects. Also disclosed is an apparatus comprising at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel, a shaft having a proximal end and a distal end, wherein the distal end of the shaft extends into the interior of the at least one vessel, wherein the proximal end of the shaft is coupled to a motor, at least one support structure which extends laterally from the shaft, and a substrate attachment fixture on a distal end of the at least one support structure, wherein the at least one support structure and the substrate attachment fixture are within the interior of the at least one vessel.
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