- 专利标题: Thermal management solutions that reduce inductive coupling between stacked integrated circuit devices
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申请号: US16040746申请日: 2018-07-20
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公开(公告)号: US11823972B2公开(公告)日: 2023-11-21
- 发明人: Feras Eid , Adel Elsherbini , Johanna Swan
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Essential Patents Group, LLP
- 主分类号: H01L23/367
- IPC分类号: H01L23/367 ; H01L25/065 ; H01L23/498 ; H01L23/373
摘要:
An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device comprising at least one first thermally conductive structure proximate at least one of the first integrated circuit device, the second integrated circuit device, and the substrate; and a second thermally conductive structure disposed over the first thermally conductive structure(s), the first integrated circuit device, and the second integrated circuit device, wherein the first thermally conductive structure(s) have a lower electrical conductivity than an electrical conductivity of the second thermally conductive structure. The first thermally conductive structure(s) may be formed by an additive process or may be pre-formed and attached to at least one of the first integrated circuit device, the second integrated circuit device, and the substrate.
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