- 专利标题： Memory device for correcting pulse duty and memory system including the same
-
申请号： US17569144申请日： 2022-01-05
-
公开(公告)号： US11837310B2公开(公告)日： 2023-12-05
- 发明人: Jaehyeong Hong , In Seok Kong , Gwan Woo Kim , Jae Young Park , Kwan Su Shon , Soon Sung An , Daeho Yang , Sung Hwa Ok , Junseo Jang , Yo Han Jeong , Eun Ji Choi
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T GROUP LLP
- 优先权： KR 20210110373 2021.08.20
- 主分类号： G11C29/44
- IPC分类号： G11C29/44 ; G11C29/12 ; H03K5/15 ; H03K19/17736 ; H03K5/156 ; H03K19/20
摘要：
The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.
公开/授权文献
信息查询
