发明授权
- 专利标题： Method to improve profile control during selective etching of silicon nitride spacers
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申请号： US17945631申请日： 2022-09-15
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公开(公告)号： US11837474B2公开(公告)日： 2023-12-05
- 发明人: Xiangyu Guo , James Royer , Venkateswara R. Pallem , Nathan Stafford
- 申请人： American Air Liquide, Inc.
- 申请人地址： US CA Fremont
- 专利权人： American Air Liquide, Inc.
- 当前专利权人： American Air Liquide, Inc.
- 当前专利权人地址： US CA Fremont
- 代理商 Yan Jiang
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L29/66 ; H01L21/3105
摘要：
Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.
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