Invention Grant
- Patent Title: Heatsink cutout and insulating through silicon vias to cut thermal cross-talk
-
Application No.: US16783819Application Date: 2020-02-06
-
Publication No.: US11837519B2Publication Date: 2023-12-05
- Inventor: Zhimin Wan , Chia-Pin Chiu , Chandra Mohan Jha
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/15
- IPC: H01L23/15 ; H01L23/367 ; H01L25/065 ; H01L23/538 ; H01L23/498 ; H01L23/00

Abstract:
Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises an interposer, a first die attached to the interposer, and a second die attached to the interposer. In an embodiment, the electronic package further comprises a heatsink thermally coupled to the first die and the second die. In an embodiment, the heatsink has a first surface facing away from the first die and the second die and a second surface facing the first die and the second die. In an embodiment, the heatsink comprises a thermal break between the first die and the second die.
Public/Granted literature
- US20210249324A1 HEATSINK CUTOUT AND INSULATING THROUGH SILICON VIAS TO CUT THERMAL CROSS-TALK Public/Granted day:2021-08-12
Information query
IPC分类: