- Patent Title: Semiconductor device with galvanically isolated semiconductor chips
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Application No.: US17883750Application Date: 2022-08-09
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Publication No.: US11837531B2Publication Date: 2023-12-05
- Inventor: Rainer Markus Schaller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE 2019117789.8 2019.07.02
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/065 ; H01L23/31 ; H01L23/14 ; H01L23/00

Abstract:
A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.
Public/Granted literature
- US20220384319A1 SEMICONDUCTOR DEVICE WITH GALVANICALLY ISOLATED SEMICONDUCTOR CHIPS Public/Granted day:2022-12-01
Information query
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