A resistive random access memory (RRAM) device may be provided, including: a base layer, a vertical electrode stack arranged over the base layer, where the vertical electrode stack may include alternating mask elements and first electrodes, and each first electrode may include an extended portion extending beyond at least one side surface of at least one mask element adjoining the first electrode, a switching layer arranged along the extended portion of each first electrode and along the at least one side surface of the at least one mask element adjoining the first electrode, and a second electrode including a surface in contact with the switching layer. The RRAM device may have a 3D structure.