Invention Grant
- Patent Title: Bandgap reference circuit
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Application No.: US17740589Application Date: 2022-05-10
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Publication No.: US11846962B2Publication Date: 2023-12-19
- Inventor: Mario Motz , Francesco Polo
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Priority: DE 2021112735.1 2021.05.17
- Main IPC: H02M3/26
- IPC: H02M3/26 ; G05F3/26 ; H03F3/45 ; G05F3/20 ; G05F3/22

Abstract:
A bandgap reference circuit includes a bandgap reference core circuit that includes a first bipolar transistor having a first emitter current density and a first base-emitter voltage, a second bipolar transistor having a second emitter current density that is smaller than the first emitter current density and having a second base-emitter voltage, a resistor that is connected to the emitter of the second bipolar transistor, and a differential amplifier circuit that is configured to control first and second emitter currents through the first and second bipolar transistors, respectively, such that a sum of the second base-emitter voltage and a voltage drop across the resistor approximates the first base-emitter voltage. The bandgap reference circuit further includes a first replica bipolar transistor that emulates an operating point of the first bipolar transistor and a second replica bipolar transistor that emulates an operating point of the second bipolar transistor.
Public/Granted literature
- US20220374037A1 BANDGAP REFERENCE CIRCUIT Public/Granted day:2022-11-24
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