Invention Grant
- Patent Title: Intelligent management of ferroelectric memory in a data storage device
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Application No.: US17730920Application Date: 2022-04-27
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Publication No.: US11853213B2Publication Date: 2023-12-26
- Inventor: Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Fremont
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Fremont
- Agency: HOLZER PATEL DRENNAN
- Main IPC: G06F12/0802
- IPC: G06F12/0802 ; G06F3/06

Abstract:
Method and apparatus for managing a front-end cache formed of ferroelectric memory element (FME) cells. Prior to storage of writeback data associated with a pending write command from a client device, an intelligent cache manager circuit forwards a first status value indicative that sufficient capacity is available in the front-end cache for the writeback data. Non-requested speculative readback data previously transferred to the front-end cache from the main NVM memory store may be jettisoned to accommodate the writeback data. A second status value may be supplied to the client device if insufficient capacity is available to store the writeback data in the front-end cache, and a different, non-FME based cache may be used in such case. Mode select inputs can be supplied by the client device specify a particular quality of service level for the front-end cache, enabling selection of suitable writeback and speculative readback data processing strategies.
Public/Granted literature
- US20220350739A1 INTELLIGENT MANAGEMENT OF FERROELECTRIC MEMORY IN A DATA STORAGE DEVICE Public/Granted day:2022-11-03
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