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公开(公告)号：US11922055B2
公开(公告)日：2024-03-05
申请号：US17730345
申请日：2022-04-27
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
CPC分类号： G06F3/0655 , G06F3/0604 , G06F3/0679 , G11C11/22
摘要： Apparatus and method for managing data in a processing system, such as but not limited to a data storage device such as a solid-state drive (SSD). A ferroelectric stack register memory has a first arrangement of ferroelectric memory cells (FMEs) of a first construction and a second arrangement of FMEs of a different, second construction arranged to provide respective cache lines for use by a controller, such as a programmable processor. A pointer mechanism is configured to provide pointers to point to each of the respective cache lines based on a time sequence of operation of the processor. Data sets can be migrated to the different arrangements by the controller as required based on the different operational characteristics of the respective FME constructions. The FMEs may be non-volatile and read-destructive. Refresh circuitry can be selectively enacted under different operational modes.
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公开(公告)号：US20220405208A1
公开(公告)日：2022-12-22
申请号：US17844141
申请日：2022-06-20
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
IPC分类号： G06F12/0891
摘要： A data storage system can employ a read destructive memory configured to fill a first cache with a first data set from a data repository prior to populating a second cache with a second data set describing the first data set with the first and second cache each having non-volatile ferroelectric memory cells. An entirety of the first cache may be read in response to a cache hit in the second cache with the cache hit responsive to a data read command from a host and with the first cache being read without a refresh operation restoring the data of the first cache.
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公开(公告)号：US11868621B2
公开(公告)日：2024-01-09
申请号：US17844174
申请日：2022-06-20
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
CPC分类号： G06F3/0616 , G06F3/0653 , G06F3/0679 , G11C29/08
摘要： A data storage system can employ a read destructive memory configured with multiple levels. A non-volatile memory unit can be programmed with a first logical state in response to a first write voltage of a first hysteresis loop by a write controller prior to being programmed to a second logical state in response to a second write voltage of the first hysteresis loop, as directed by the write controller. The first and second logical states may be present concurrently in the non-volatile memory unit and subsequently read concurrently as the first logical state and the second logical state.
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公开(公告)号：US20220350523A1
公开(公告)日：2022-11-03
申请号：US17730345
申请日：2022-04-27
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
IPC分类号： G06F3/06
摘要： Apparatus and method for managing data in a processing system, such as but not limited to a data storage device such as a solid-state drive (SSD). A ferroelectric stack register memory has a first arrangement of ferroelectric memory cells (FMEs) of a first construction and a second arrangement of FMEs of a different, second construction arranged to provide respective cache lines for use by a controller, such as a programmable processor. A pointer mechanism is configured to provide pointers to point to each of the respective cache lines based on a time sequence of operation of the processor. Data sets can be migrated to the different arrangements by the controller as required based on the different operational characteristics of the respective FME constructions. The FMEs may be non-volatile and read-destructive. Refresh circuitry can be selectively enacted under different operational modes.
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公开(公告)号：US20220343962A1
公开(公告)日：2022-10-27
申请号：US17726864
申请日：2022-04-22
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
摘要： A system on chip (SOC) integrated circuit device having an incorporated ferroelectric memory configured to be selectively refreshed, or not, depending on different operational modes. The ferroelectric memory is formed of an array of ferroelectric memory elements (FMEs) characterized as non-volatile, read-destructive semiconductor memory cells each having at least one ferroelectric layer. The FMEs can include FeRAM, FeFET or FTJ constructions. A read/write circuit writes data to the FMEs and subsequently reads back data from the FMEs responsive to respective write and read signals supplied by a processor circuit of the SOC. A refresh circuit is selectively enabled in a first normal mode to refresh the FMEs after a read operation, and is selectively disabled in a second exception mode so that the FMEs are not refreshed after a read operation. The FMEs can be used as a main memory, a cache, a buffer, an OTP, a keystore, etc.
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公开(公告)号：US11908504B2
公开(公告)日：2024-02-20
申请号：US17719637
申请日：2022-04-13
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
CPC分类号： G11C11/223 , G11C11/2273 , G11C11/2275 , H10B51/20 , H10B51/30
摘要： A memory device formed of ferroelectric field effect transistors (FeFETs). The memory device can be used as a front end buffer, such as in a data storage device having a non-volatile memory (NVM). A controller can be configured to transfer user data between the NVM and an external client (host) via the buffer. The FeFETs can be arranged in a two-dimensional (2D) or a three-dimensional (3D) array. A monitor circuit can be used to monitor operation of the FeFETs. An optimization controller can be used to adjust at least one operational parameter associated with the FeFETs responsive to the monitored operation by the monitor circuit. The FeFETs may require a refresh operation after each read operation. A power down sequence can involve a read operation without a subsequent refresh operation to wipe the FeFETs, the read operation jettisoning the data read from the buffer memory.
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公开(公告)号：US20220406396A1
公开(公告)日：2022-12-22
申请号：US17845643
申请日：2022-06-21
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
摘要： A data storage system can utilize one or more data storage devices that employ a solid-state non-volatile read destructive memory consisting of ferroelectric memory cells. A leveling strategy can be generated by a wear module connected to the memory with the leveling strategy prescribing a plurality of memory cell operating parameters associated with different amounts of cell wear. The wear module may monitor activity of a memory cell and detect an amount of wear in the memory cell as a result of the monitored activity, which can prompt changing a default set of operating parameters for the memory cell to a first stage of operating parameters, as prescribed by the leveling strategy, in response to the detected amount of wear.
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公开(公告)号：US20220399054A1
公开(公告)日：2022-12-15
申请号：US17840779
申请日：2022-06-15
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
摘要： A non-volatile memory (NVM) is formed of memory cells each having multiple ferroelectric memory elements (FMEs). Each FME stores data in relation to an electrical polarity of a recording layer formed of ferroelectric or anti-ferroelectric material. Each multi-FME memory cell is coupled to a set of external control lines activated by a control circuit in a selected order to perform program and/or read operations upon the FMEs. The FMEs may share a nominally identical construction or may have different constructions. Data are programmed and written responsive to the respective program/read responses of the FMEs. Constructions can include ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs). The NVM may form a portion of a data storage device, such as a solid-state drive (SSD).
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公开(公告)号：US20220328086A1
公开(公告)日：2022-10-13
申请号：US17719637
申请日：2022-04-13
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
IPC分类号： G11C11/22 , H01L27/1159 , H01L27/11597
摘要： A memory device formed of ferroelectric field effect transistors (FeFETs). The memory device can be used as a front end buffer, such as in a data storage device having a non-volatile memory (NVM). A controller can be configured to transfer user data between the NVM and an external client (host) via the buffer. The FeFETs can be arranged in a two-dimensional (2D) or a three-dimensional (3D) array. A monitor circuit can be used to monitor operation of the FeFETs. An optimization controller can be used to adjust at least one operational parameter associated with the FeFETs responsive to the monitored operation by the monitor circuit. The FeFETs may require a refresh operation after each read operation. A power down sequence can involve a read operation without a subsequent refresh operation to wipe the FeFETs, the read operation jettisoning the data read from the buffer memory.
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公开(公告)号：US12125513B2
公开(公告)日：2024-10-22
申请号：US17726864
申请日：2022-04-22
发明人： Jon D. Trantham , Praveen Viraraghavan , John W. Dykes , Ian J. Gilbert , Sangita Shreedharan Kalarickal , Matthew J. Totin , Mohamad El-Batal , Darshana H. Mehta
CPC分类号： G11C11/2273 , G11C7/1039 , G11C11/2275 , G11C11/2297 , G11C17/12
摘要： A system on chip (SOC) integrated circuit device having an incorporated ferroelectric memory configured to be selectively refreshed, or not, depending on different operational modes. The ferroelectric memory is formed of an array of ferroelectric memory elements (FMEs) characterized as non-volatile, read-destructive semiconductor memory cells each having at least one ferroelectric layer. The FMEs can include FeRAM, FeFET or FTJ constructions. A read/write circuit writes data to the FMEs and subsequently reads back data from the FMEs responsive to respective write and read signals supplied by a processor circuit of the SOC. A refresh circuit is selectively enabled in a first normal mode to refresh the FMEs after a read operation, and is selectively disabled in a second exception mode so that the FMEs are not refreshed after a read operation. The FMEs can be used as a main memory, a cache, a buffer, an OTP, a keystore, etc.
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