Invention Grant
- Patent Title: Hybrid memory device using different types of capacitors
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Application No.: US17374359Application Date: 2021-07-13
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Publication No.: US11853552B2Publication Date: 2023-12-26
- Inventor: Kevin J. Ryan , Kirk D. Prall , Durai Vishak Nirmal Ramaswamy , Robert Quinn
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- The original application number of the division: US16358219 2019.03.19
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/404 ; G11C11/00 ; H10B12/00 ; H10B53/30 ; G11C11/22 ; G11C11/4096 ; G11C14/00 ; H01L23/528 ; H01L49/02

Abstract:
The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
Public/Granted literature
- US20210405884A1 HYBRID MEMORY DEVICE Public/Granted day:2021-12-30
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