Invention Grant
- Patent Title: Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach
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Application No.: US16908542Application Date: 2020-06-22
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Publication No.: US11854888B2Publication Date: 2023-12-26
- Inventor: Jungrae Park , Zavier Zai Yeong Tan , Karthik Balakrishnan , James S. Papanu , Wei-Sheng Lei
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/67 ; H01L21/02 ; H01L21/268 ; H01L21/3065
Abstract:
An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.
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Information query
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