Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture
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Application No.: US17873876Application Date: 2022-07-26
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Publication No.: US11854983B2Publication Date: 2023-12-26
- Inventor: Shang-Yun Hou , Hsien-Pin Hu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16887458 2020.05.29
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L23/31
Abstract:
Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.
Public/Granted literature
- US20220367362A1 Semiconductor Devices and Methods of Manufacture Public/Granted day:2022-11-17
Information query
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