Invention Grant
- Patent Title: Semiconductor devices with a double sided word line structure and methods of manufacture
-
Application No.: US17332135Application Date: 2021-05-27
-
Publication No.: US11856876B2Publication Date: 2023-12-26
- Inventor: Tung-Ying Lee , Shao-Ming Yu , Cheng-Chun Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H10N70/00
- IPC: H10N70/00 ; G11C7/18 ; G11C8/14 ; H10B63/00
Abstract:
Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.
Public/Granted literature
- US20220310914A1 Semiconductor Devices and Methods of Manufacture Public/Granted day:2022-09-29
Information query
