Invention Grant
- Patent Title: Contact isolation in semiconductor devices
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Application No.: US17006642Application Date: 2020-08-28
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Publication No.: US11862452B2Publication Date: 2024-01-02
- Inventor: Boon Teik Chan , Waikin Li , Zheng Tao
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP 194719 2019.08.30
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/092 ; H01L21/8238 ; H01L29/06 ; H01L21/02 ; H01L29/775 ; H01L21/822 ; H01L29/10 ; H01L21/768
Abstract:
In a first aspect, the present disclosure relates to a method for forming a contact isolation for a semiconductor device, comprising: providing a semiconductor structure comprising a trench exposing a contact thereunder, filling a bottom of the trench with a sacrificial material, infiltrating the sacrificial material with a ceramic material, and removing the sacrificial material.
Public/Granted literature
- US20210066116A1 Contact Isolation in Semiconductor Devices Public/Granted day:2021-03-04
Information query
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