A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.