According to one embodiment, a semiconductor memory device includes the following structure. A memory array is provided on a first-direction side of a substrate. The first direction intersects the substrate. The first peripheral circuit is provided between the substrate and the memory array. The second peripheral circuit is provided between the substrate and the memory array and on a second-direction side of the first peripheral circuit. The second direction intersects the first direction. The sense amplifier is provided between the substrate and the memory array and between the first and second peripheral circuits. A second-direction length of the second peripheral circuit is smaller than half a second-direction length of the sense amplifier.