- 专利标题: Granular error reporting on multi-pass programming of non-volatile memory
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申请号: US17946328申请日: 2022-09-16
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公开(公告)号: US11868202B2公开(公告)日: 2024-01-09
- 发明人: Qisong Lin , Vamsi Pavan Rayaprolu , Jiangang Wu , Sampath K. Ratnam , Sivagnanam Parthasarathy , Shao Chun Shi
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Lowenstein Sandler LLP
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G06F11/07
摘要:
A system includes a memory component to, upon completion of second pass programming in response to a multi-pass programming command, write a plurality of flag bits within a group of memory cells programmed by the multi-pass programming command. The system also includes a processing device, operatively coupled to the memory component. The processing device is to detect an error in attempting to read a top page of the group of memory cells, determine a number of first values within the plurality of flag bits, and in response to the number of first values not satisfying a threshold criterion, report, to a host computing device, an uncorrectable data error due to the top page of the group of memory cells being incompletely programmed.
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