Invention Grant
- Patent Title: Semiconductor device comprising magnetic tunneling junctions (MTJs) in a magnetoresistive random access memory (MRAM)
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Application No.: US17389310Application Date: 2021-07-29
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Publication No.: US11871585B2Publication Date: 2024-01-09
- Inventor: Po-Wei Wang , Yi-An Shih , Huan-Chi Ma
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110748672.0 2021.07.02
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/85

Abstract:
A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.
Public/Granted literature
- US20230005988A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-01-05
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