公开(公告)号：US12156408B2

公开(公告)日：2024-11-26

申请号：US18515289

申请日：2023-11-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wei Wang ,  Yi-An Shih ,  Huan-Chi Ma

IPC: H10B61/00 ,  H10N50/85

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

公开(公告)号：US20240413233A1

公开(公告)日：2024-12-12

申请号：US18221863

申请日：2023-07-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chuan Chen ,  Po-Wei Wang ,  Huan-Chi Ma ,  Chien-Wen Yu

IPC: H01L29/778 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/40 ,  H01L29/47 ,  H01L29/66

Abstract: A GaN-based semiconductor device includes a substrate; a GaN channel layer disposed on the substrate; a AlGaN layer disposed on the GaN channel layer; a p-GaN gate layer disposed on the AlGaN layer; and a nitrogen-rich TiN hard mask layer disposed on the p-GaN gate layer. The nitrogen-rich TiN hard mask layer has a nitrogen-to-titanium (N/Ti) ratio that is greater than 1.0. A gate electrode layer is disposed on the nitrogen-rich TiN hard mask layer.

公开(公告)号：US20250048649A1

公开(公告)日：2025-02-06

申请号：US18919403

申请日：2024-10-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wei Wang ,  Yi-An Shih ,  Huan-Chi Ma

IPC: H10B61/00 ,  H10N50/85

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

公开(公告)号：US20230005988A1

公开(公告)日：2023-01-05

申请号：US17389310

申请日：2021-07-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wei Wang ,  Yi-An Shih ,  Huan-Chi Ma

IPC: H01L27/22

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

公开(公告)号：US20240090233A1

公开(公告)日：2024-03-14

申请号：US18515289

申请日：2023-11-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wei Wang ,  Yi-An Shih ,  Huan-Chi Ma

IPC: H10B61/00

CPC classification number: H10B61/00 ,  H10N50/85

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.

公开(公告)号：US11871585B2

公开(公告)日：2024-01-09

申请号：US17389310

申请日：2021-07-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Wei Wang ,  Yi-An Shih ,  Huan-Chi Ma

IPC: H10B61/00 ,  H10N50/85

CPC classification number: H10B61/00 ,  H10N50/85

Abstract: A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.