- 专利标题: Contacts having a geometry to reduce resistance
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申请号: US17325509申请日: 2021-05-20
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公开(公告)号: US11875987B2公开(公告)日: 2024-01-16
- 发明人: Lawrence A. Clevenger , Baozhen Li , Kirk D. Peterson , Terry A. Spooner , Junli Wang
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 代理机构: Tutunjian & Bitetto, P.C.
- 代理商 Kimberly Zillig
- 分案原申请号: US15978829 2018.05.14
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L23/535 ; H01L21/285 ; H01L23/485
摘要:
A method of increasing the surface area of a contact to an electrical device that in one embodiment includes forming a contact stud extending through an intralevel dielectric layer to a component of the electrical device, and selectively forming a contact region on the contact stud. The selectively formed contact region has an exterior surface defined by a curvature and has a surface area that is greater than a surface area of the contact stud. An interlevel dielectric layer is formed on the intralevel dielectric layer, wherein an interlevel contact extends through the interlevel dielectric layer into direct contact with the selectively formed contact region.
公开/授权文献
- US20210272902A1 CONTACTS HAVING A GEOMETRY TO REDUCE RESISTANCE 公开/授权日:2021-09-02
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