Invention Grant
- Patent Title: Memory device and method of manufacturing the same
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Application No.: US17504546Application Date: 2021-10-19
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Publication No.: US11876048B2Publication Date: 2024-01-16
- Inventor: Wen-Chieh Tsai , Cheng-Ta Yang , Tsung-Wei Lin
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/528 ; H01L21/768

Abstract:
Provided is a memory device, including: a substrate; a plurality of word lines, extending in a first direction, arranged in a second direction, disposed on the substrate; a dummy structure, adjacent to ends of the word lines, disposed on the substrate, wherein the dummy structure includes a main part that extends in the second direction; and a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines.
Public/Granted literature
- US20230118367A1 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-04-20
Information query
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