MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230118367A1

    公开(公告)日:2023-04-20

    申请号:US17504546

    申请日:2021-10-19

    Abstract: Provided is a memory device, including: a substrate; a plurality of word lines, extending in a first direction, arranged in a second direction, disposed on the substrate; a dummy structure, adjacent to ends of the word lines, disposed on the substrate, wherein the dummy structure includes a main part that extends in the second direction; and a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines.

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