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    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20240387175A1

    公开(公告)日：2024-11-21

    申请号：US18628824

    申请日：2024-04-08

    Applicant: Winbond Electronics Corp.

    Inventor： Chungchen Hsu ,  Tsung-Wei Lin ,  Kun-Che Wu

    IPC: H01L21/033 ,  H01L21/3213

    Abstract: A semiconductor structure includes a substrate and a target pattern. The target pattern is disposed on the substrate. The top-view pattern of the target pattern includes a main portion and a protruding portion. The main portion and the protruding portion are connected with each other along the long axis of the top-view pattern of the target pattern. The protruding portion is connected to the main portion. The protruding portion includes a first portion located on one side of the long axis. The maximum width of the first portion perpendicular to the long axis is less than half of the maximum width of the main portion.

    SEMICONDUCTOR DEVICE AND MANUFACTURING MEHOD OF THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING MEHOD OF THE SAME 有权

    公开(公告)号：US20210225639A1

    公开(公告)日：2021-07-22

    申请号：US17033695

    申请日：2020-09-26

    Applicant: Winbond Electronics Corp.

    Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

    IPC: H01L21/027

    Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

    MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
    4.
    发明公开
    MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20240297047A1

    公开(公告)日：2024-09-05

    申请号：US18592416

    申请日：2024-02-29

    Applicant: Winbond Electronics Corp.

    Inventor： Kun-Che Wu ,  Tsung-Wei Lin ,  Chungchen Hsu

    IPC: H01L21/308 ,  H01L21/027

    CPC classification number: H01L21/3086 ,  H01L21/0274 ,  H01L21/3081

    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A substrate is provided. A material layer is formed on the substrate. A first hard mask pattern is formed on the material layer. The top-view pattern of the first hard mask pattern is ring-shaped. The first hard mask pattern has an opening. A second hard mask pattern is formed on the first hard mask pattern. The second hard mask pattern fills the opening. The top-view pattern of the second hard mask pattern is completely located inside the outer contour of the top-view pattern of the first hard mask pattern. The pattern of the first hard mask pattern and the pattern of the second hard mask pattern are transferred to the material layer to form a first target pattern.

    Semiconductor device and manufacturing method of the same
    5.
    发明授权
    Semiconductor device and manufacturing method of the same 有权

    公开(公告)号：US11545360B2

    公开(公告)日：2023-01-03

    申请号：US17033695

    申请日：2020-09-26

    Applicant: Winbond Electronics Corp.

    Inventor： Tsung-Wei Lin ,  Kun-Che Wu ,  Chun-Sheng Wu

    IPC: H01L21/027

    Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

    Layout of wordline and method of forming the same
    6.
    发明授权
    Layout of wordline and method of forming the same 有权

    公开(公告)号：US11515252B2

    公开(公告)日：2022-11-29

    申请号：US17345391

    申请日：2021-06-11

    Applicant: Winbond Electronics Corp.

    Inventor： Tsung-Wei Lin ,  Chun-Yen Liao ,  Chun-Sheng Wu

    IPC: H01L21/00 ,  H01L23/528 ,  H01L21/768

    Abstract: A word line layout includes a substrate, a first word line group, a second word line group, and an I-shaped third word line. The first word line group is disposed on the substrate and includes a plurality of L-shaped first word lines, and each of the first word lines has a first segment and a second segment connected to each other. The second word line group is disposed on the substrate and includes a plurality of L-shaped second word lines, and each of the second word lines has a first segment and a second segment connected to each other. The first word line group and the second word line group are arranged in juxtaposition and symmetric to each other. The I-shaped third word line is disposed on the outer side of the first word line group and the second word line group.

    Method for forming semiconductor memory structure
    7.
    发明授权
    Method for forming semiconductor memory structure 有权

    公开(公告)号：US12148627B2

    公开(公告)日：2024-11-19

    申请号：US17480757

    申请日：2021-09-21

    Applicant: Winbond Electronics Corp.

    Inventor： Hsin-Hung Chou ,  Tsung-Wei Lin ,  Kao-Tsair Tsai

    IPC: H01L21/3213 ,  H01L21/027 ,  H01L21/311 ,  H01L29/66 ,  H10B41/30

    Abstract: A method for forming a semiconductor memory structure includes sequentially forming an active layer, a hard mask layer and a core layer over a substrate, and etching the core layer to form a core pattern. The core pattern includes a first strip, a second strip, and a plurality of supporting features abutting the first and second strips. The method also includes forming a spacer layer alongside the core pattern, removing the core pattern, forming a photoresist pattern above the spacer layer, etching the hard mask layer using the photoresist pattern and the spacer layer to form a hard mask pattern, and transferring the hard mask pattern into the active layer to form a gate stack.

    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230118367A1

    公开(公告)日：2023-04-20

    申请号：US17504546

    申请日：2021-10-19

    Applicant: Winbond Electronics Corp.

    Inventor： Wen-Chieh Tsai ,  Cheng-Ta Yang ,  Tsung-Wei Lin

    IPC: H01L23/528 ,  H01L21/768

    Abstract: Provided is a memory device, including: a substrate; a plurality of word lines, extending in a first direction, arranged in a second direction, disposed on the substrate; a dummy structure, adjacent to ends of the word lines, disposed on the substrate, wherein the dummy structure includes a main part that extends in the second direction; and a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines.

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