- 专利标题: Semiconductor device with hollow interconnectors
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申请号: US17560578申请日: 2021-12-23
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公开(公告)号: US11876074B2公开(公告)日: 2024-01-16
- 发明人: Yi-Hsien Chou
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理商 Xuan Zhang
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/00
摘要:
The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of bottom interconnectors positioned on the second side of the package structure, and respectively including: a bottom exterior layer positioned on the second side of the to package structure; and a cavity enclosed by the bottom exterior layer.
公开/授权文献
- US20230207518A1 SEMICONDUCTOR DEVICE WITH HOLLOW INTERCONNECTORS 公开/授权日:2023-06-29
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