- 专利标题： Heterojunction bipolar transistors with stress material for improved mobility
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申请号： US17214969申请日： 2021-03-29
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公开(公告)号： US11876123B2公开(公告)日： 2024-01-16
- 发明人: Anthony K. Stamper , Vibhor Jain , Renata A. Camillo-Castillo
- 申请人： GLOBALFOUNDRIES U.S. Inc.
- 申请人地址： US NY Malta
- 专利权人： GlobalFoundries U.S. Inc.
- 当前专利权人： GlobalFoundries U.S. Inc.
- 当前专利权人地址： US NY Malta
- 代理机构： Hoffman Warnick LLC
- 代理商 Michael LeStrange
- 分案原申请号： US15427182 2017.02.08
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/06 ; H01L29/737 ; H01L29/732
摘要：
According to a semiconductor device herein, the device includes a substrate. An active device is formed in the substrate. The active device includes a collector region, a base region formed on the collector region, and an emitter region formed on the base region. An isolation structure is formed in the substrate around the active device. A trench filled with a compressive material is formed in the substrate and positioned laterally adjacent to the emitter region and base region. The trench extends at least partially into the collector region.
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