Invention Grant
- Patent Title: Nonvolatile memory device and method of programming in a nonvolatile memory
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Application No.: US18159882Application Date: 2023-01-26
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Publication No.: US11881272B2Publication Date: 2024-01-23
- Inventor: Yonghyuk Choi , Sangwan Nam , Jaeduk Yu , Yohan Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200139081 2020.10.26
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C16/08 ; G11C16/10 ; G11C16/24 ; H01L23/00 ; H01L25/065 ; H01L25/18 ; H10B41/27 ; H10B43/27

Abstract:
A nonvolatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings, each including a string selection transistor, a plurality of memory cells and a ground selection transistor. The control circuit controls a program operation by precharging channels of the plurality of cell strings to a first voltage during a bit-line set-up period of a program loop, applying a program voltage to a selected word-line of the plurality of cell strings during a program execution period of the program loop and after recovering voltages of the selected word-line and unselected word-lines of the plurality of cell strings to a negative voltage smaller than a ground voltage, recovering the voltages of the selected word-line and the unselected word-lines to a second voltage greater than the ground voltage during a recovery period of the program loop.
Public/Granted literature
- US20230170031A1 NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN A NONVOLATILE MEMORY Public/Granted day:2023-06-01
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