Invention Grant
- Patent Title: Memory device and operating method thereof
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Application No.: US17718422Application Date: 2022-04-12
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Publication No.: US11881277B2Publication Date: 2024-01-23
- Inventor: Sungrae Kim , Myungkyu Lee , Kijun Lee , Sunghye Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20210103984 2021.08.06
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C15/04 ; G11C17/16 ; H03M13/11 ; H03M13/15 ; G06F11/10

Abstract:
An operating method of a memory device includes storing position information regarding a codeword including an erasure and erasure information including position information regarding the erasure in a memory region, loading the position information regarding the codeword to a row decoder and a column decoder, determining whether a read address corresponding to a read instruction is identical to the position information regarding the codeword including the erasure, in response to the read instruction from a host, transmitting the position information of the erasure to an error correction code (ECC) decoder, when the read address is identical to the position information regarding the codeword including the erasure, and correcting, by the ECC decoder, an error in a codeword received from a memory cell array using the position information regarding the erasure.
Public/Granted literature
- US20230037996A1 MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2023-02-09
Information query