Invention Grant
- Patent Title: Bipolar transistor structure on semiconductor fin and methods to form same
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Application No.: US17644939Application Date: 2021-12-17
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Publication No.: US11881395B2Publication Date: 2024-01-23
- Inventor: Judson R. Holt , Hong Yu , Alexander M. Derrickson
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/08 ; H01L29/66 ; H01L29/10

Abstract:
Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.
Public/Granted literature
- US20230062013A1 BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FORM SAME Public/Granted day:2023-03-02
Information query
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