Invention Grant
- Patent Title: Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device
-
Application No.: US17869524Application Date: 2022-07-20
-
Publication No.: US11881397B2Publication Date: 2024-01-23
- Inventor: Iris Moder , Bernhard Goller , Tobias Franz Wolfgang Hoechbauer , Roland Rupp , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: COOPER LEGAL GROUP, LLC
- Priority: DE 2019105677.2 2019.03.06 DE 2019108754.6 2019.04.03
- The original application number of the division: US16811192 2020.03.06
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/4757 ; H01L21/475 ; H01L21/467 ; H01L29/739 ; H01L29/78
Abstract:
A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.
Public/Granted literature
Information query
IPC分类:
