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公开(公告)号：US11712749B2
公开(公告)日：2023-08-01
申请号：US16986411
申请日：2020-08-06
发明人： Ralf Rieske , Alexander Binter , Wolfgang Diewald , Bernhard Goller , Heimo Graf , Gerald Lackner , Jan Richter , Roland Rupp , Guenter Schagerl , Marko Swoboda
IPC分类号： B23K26/0622 , H01L21/02 , B23K26/00 , H01L21/78
CPC分类号： B23K26/0624 , B23K26/0006 , H01L21/02378 , H01L21/7813
摘要： Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.
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2.发明授权公开(公告)号：US10903078B2
公开(公告)日：2021-01-26
申请号：US16422659
申请日：2019-05-24
发明人： Hans-Joachim Schulze , Alexander Breymesser , Guenter Denifl , Mihai Draghici , Bernhard Goller , Tobias Franz Wolfgang Hoechbauer , Wolfgang Lehnert , Roland Rupp , Werner Schustereder
IPC分类号： H01L21/04 , H01L29/16 , H01L21/265 , H01L21/02 , H01L21/324
摘要： A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.
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公开(公告)号：US20200027774A1
公开(公告)日：2020-01-23
申请号：US16514632
申请日：2019-07-17
IPC分类号： H01L21/683 , H01L21/67 , H01L21/78 , B32B38/00 , B32B37/12
摘要： According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.
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公开(公告)号：US20180076321A1
公开(公告)日：2018-03-15
申请号：US15261566
申请日：2016-09-09
发明人： Bernhard Goller , Kurt Matoy
IPC分类号： H01L29/78 , H01L21/306 , H01L29/66 , H01L29/423 , H01L21/768 , H01L21/308 , H01L29/417
CPC分类号： H01L29/7827 , H01L21/30604 , H01L21/30612 , H01L21/308 , H01L21/743 , H01L21/76841 , H01L29/34 , H01L29/401 , H01L29/41741 , H01L29/4236 , H01L29/66666 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/8611
摘要： A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. The first plurality of features has an average height that is a first height. The second surface of the semiconductor substrate is etched from the first side using a second etching process to expose a third surface of the semiconductor substrate. The second etching process converts the first plurality of features into a second plurality of features. The second plurality of features has an average height that is a second height. The second height is less than the first height. A conductive layer is formed over the third surface of the semiconductor substrate using a physical deposition process.
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5.发明授权公开(公告)号：US09614256B2
公开(公告)日：2017-04-04
申请号：US14230086
申请日：2014-03-31
发明人： Kamil Karlovsky , Rafael Janski , Michael Sorger , Magdalena Forster , Katharina Schmut , Vijaye Kumar Rajaraman , Rainer Leuschner , Bernhard Goller
IPC分类号： H01M10/42 , H01M2/02 , H01M10/04 , H01M2/04 , H01M2/36 , H01M4/38 , H01M4/66 , H01M10/0525 , H01M10/058
CPC分类号： H01M10/058 , H01M2/0202 , H01M2/0207 , H01M2/024 , H01M2/026 , H01M2/027 , H01M2/0285 , H01M2/0404 , H01M2/0486 , H01M2/08 , H01M2/361 , H01M4/134 , H01M4/386 , H01M4/66 , H01M10/04 , H01M10/0525 , H01M10/4257 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02P70/54 , Y10T29/4911
摘要： A lithium ion battery includes a first substrate having a first main surface, and a lid including a conductive cover element, the lid being attached to the first main surface. A cavity is formed between the first substrate and the lid. The battery further includes an electrolyte disposed in the cavity. An anode of the battery includes a component made of a semiconductor material and is formed at the first substrate, and a cathode of the battery is formed at the lid.
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公开(公告)号：US09489607B2
公开(公告)日：2016-11-08
申请号：US13896676
申请日：2013-05-17
IPC分类号： G06K19/06 , G06K19/07 , G06K19/073
CPC分类号： G06K19/07758 , G06K19/0704 , G06K19/0705 , G06K19/0717 , G06K19/0723 , G06K19/073
摘要： A semiconductor device includes a semiconductor substrate, a battery attached to the semiconductor substrate, and a sensor attached to the semiconductor substrate. The battery is electrically connected to the sensor and configured to supply the sensor with electrical power.
摘要翻译： 半导体器件包括半导体衬底，附接到半导体衬底的电池和附接到半导体衬底的传感器。 电池电连接到传感器并且被配置为向传感器提供电力。
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公开(公告)号：US20160220125A1
公开(公告)日：2016-08-04
申请号：US15011165
申请日：2016-01-29
IPC分类号： A61B5/0215 , A61B5/00
CPC分类号： A61B5/0215 , A61B5/022 , A61B5/6852
摘要： An implantable vessel fluid sensor is configured to sense at least one vessel fluid parameter of a vessel. The implantable vessel fluid sensor includes a tubular body having a first end portion. The first end portion is configured to be inserted into and to form a sealed junction with an open vessel end of the vessel. The implantable vessel fluid sensor further includes a sensor unit connected to the tubular body. The sensor unit includes a sensor region configured to be in direct contact with the vessel fluid in a sealed junction state. A minimum distance between the sensor region and the first end portion is at most 10 times an outer diameter of the first end portion of the tubular body.
摘要翻译： 可植入血管流体传感器构造成感测血管的至少一个血管流体参数。 可植入容器流体传感器包括具有第一端部的管状体。 第一端部构造成插入并与之形成与容器的开放容器端部的密封结。 可植入容器流体传感器还包括连接到管状体的传感器单元。 传感器单元包括传感器区域，其被配置为在密封连接状态下与容器流体直接接触。 传感器区域和第一端部之间的最小距离为管状体的第一端部的外径的至多10倍。
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8.发明申请Lithium Ion Battery, Integrated Circuit and Method of Manufacturing a Lithium Ion Battery 有权锂离子电池，集成电路和制造锂离子电池的方法公开(公告)号：US20150280289A1
公开(公告)日：2015-10-01
申请号：US14230086
申请日：2014-03-31
发明人： Kamil Karlovsky , Rafael Janski , Michael Sorger , Magdalena Forster , Katharina Schmut , Vijaye Kumar Rajaraman , Rainer Leuschner , Bernhard Goller
CPC分类号： H01M10/058 , H01M2/0202 , H01M2/0207 , H01M2/024 , H01M2/026 , H01M2/027 , H01M2/0285 , H01M2/0404 , H01M2/0486 , H01M2/08 , H01M2/361 , H01M4/134 , H01M4/386 , H01M4/66 , H01M10/04 , H01M10/0525 , H01M10/4257 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02P70/54 , Y10T29/4911
摘要： A lithium ion battery includes a first substrate having a first main surface, and a lid including a conductive cover element, the lid being attached to the first main surface. A cavity is formed between the first substrate and the lid. The battery further includes an electrolyte disposed in the cavity. An anode of the battery includes a component made of a semiconductor material and is formed at the first substrate, and a cathode of the battery is formed at the lid.
摘要翻译： 锂离子电池包括具有第一主表面的第一基板和包括导电盖元件的盖，所述盖附接到第一主表面。 在第一基板和盖之间形成空腔。 电池还包括设置在空腔中的电解质。 电池的阳极包括由半导体材料制成的部件，并且形成在第一基板上，并且电池的阴极形成在盖子上。
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公开(公告)号：US20150235890A1
公开(公告)日：2015-08-20
申请号：US14182689
申请日：2014-02-18
IPC分类号： H01L21/683 , H01L21/268 , H01L21/762 , H01L23/00 , H01L21/78 , H01L21/304
CPC分类号： H01L21/6835 , H01L21/268 , H01L21/304 , H01L21/561 , H01L21/568 , H01L21/76251 , H01L21/78 , H01L23/3114 , H01L24/02 , H01L24/24 , H01L24/82 , H01L24/97 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0231 , H01L2224/04105 , H01L2224/24011 , H01L2224/24105 , H01L2224/24226 , H01L2224/245 , H01L2224/82106 , H01L2224/96 , H01L2224/97 , H01L2924/06 , H01L2924/0665 , H01L2924/12042 , H01L2924/181 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/00 , H01L2224/82 , H05K3/467 , H01L2224/03 , H01L2924/01029
摘要： A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.
摘要翻译： 一种制造半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的载流子和半导体晶片。 该方法包括将介电材料施加到载体或半导体晶片，并通过电介质材料将半导体晶片接合到载体上。 该方法包括处理半导体晶片并从半导体晶片去除载体，使得介电材料保留在半导体晶片上，以提供包括电介质材料的半导体器件。
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公开(公告)号：US20150171484A1
公开(公告)日：2015-06-18
申请号：US14105681
申请日：2013-12-13
摘要： A panel according to an embodiment includes a translucent layer arrangement and a battery cell embedded at least partially into the translucent layer arrangement.
摘要翻译： 根据实施例的面板包括半透明层布置和至少部分地嵌入到半透明层布置中的电池单元。
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