Invention Grant
- Patent Title: Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same
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Application No.: US17389622Application Date: 2021-07-30
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Publication No.: US11881455B2Publication Date: 2024-01-23
- Inventor: Saehan Park , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L21/822 ; H01L23/48 ; H01L27/06 ; H01L23/532 ; H01L21/8234 ; H01L23/535 ; H01L23/485

Abstract:
Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
Public/Granted literature
Information query
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