-
公开(公告)号：US11881455B2
公开(公告)日：2024-01-23
申请号：US17389622
申请日：2021-07-30
发明人： Saehan Park , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
IPC分类号： H01L23/528 , H01L21/768 , H01L21/822 , H01L23/48 , H01L27/06 , H01L23/532 , H01L21/8234 , H01L23/535 , H01L23/485
CPC分类号： H01L23/5286 , H01L21/76898 , H01L21/8221 , H01L23/481 , H01L27/0694 , H01L23/53209 , H01L23/53228 , H01L23/53242 , H01L23/53257
摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
-
公开(公告)号：US11923365B2
公开(公告)日：2024-03-05
申请号：US17387178
申请日：2021-07-28
发明人： Jeonghyuk Yim , Ki-Il Kim , Gil Hwan Son , Kang Ill Seo
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L27/0922 , H01L21/82385 , H01L21/823857 , H01L21/823871 , H01L29/0665 , H01L29/401 , H01L29/42368 , H01L29/42376 , H01L29/42392 , H01L29/66742 , H01L29/78645
摘要： Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.
-
公开(公告)号：US12125788B2
公开(公告)日：2024-10-22
申请号：US18386497
申请日：2023-11-02
发明人： Saehan Park , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
IPC分类号： H01L23/528 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L23/48 , H01L23/498 , H01L23/532 , H01L27/06
CPC分类号： H01L23/5286 , H01L21/76898 , H01L21/8221 , H01L23/481 , H01L27/0694 , H01L23/53209 , H01L23/53228 , H01L23/53242 , H01L23/53257
摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
-
4.发明申请公开(公告)号：US20220157723A1
公开(公告)日：2022-05-19
申请号：US17159972
申请日：2021-01-27
发明人： Saehan Park , Hoonseok Seo , Jeonghyuk Yim , Ki-il Kim , Gil Hwan Son
IPC分类号： H01L23/528 , H01L27/06 , H01L23/48 , H01L23/00 , H01L21/768 , H01L21/822
摘要： Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.
-
公开(公告)号：US20240063123A1
公开(公告)日：2024-02-22
申请号：US18386497
申请日：2023-11-02
发明人： Saehan PARK , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
IPC分类号： H01L23/528 , H01L27/06 , H01L23/48 , H01L21/768 , H01L21/822
CPC分类号： H01L23/5286 , H01L27/0694 , H01L23/481 , H01L21/76898 , H01L21/8221 , H01L23/53257
摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
-
6.发明公开公开(公告)号：US20230411294A1
公开(公告)日：2023-12-21
申请号：US18457000
申请日：2023-08-28
发明人： Saehan PARK , Hoonseok Seo , Jeonghyuk Yim , Ki-il Kim , Gil Hwan Son
IPC分类号： H01L23/528 , H01L21/768 , H01L21/822 , H01L23/48 , H01L23/00 , H01L27/06
CPC分类号： H01L23/5286 , H01L21/76898 , H01L21/8221 , H01L23/481 , H01L24/05 , H01L27/0694 , H01L2224/05025 , H01L2224/05147 , H01L2224/05157 , H01L2224/05176
摘要： Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.
-
7.发明授权公开(公告)号：US11769728B2
公开(公告)日：2023-09-26
申请号：US17159972
申请日：2021-01-27
发明人： Saehan Park , Hoonseok Seo , Jeonghyuk Yim , Ki-il Kim , Gil Hwan Son
IPC分类号： H01L23/528 , H01L21/768 , H01L21/822 , H01L23/48 , H01L23/00 , H01L27/06
CPC分类号： H01L23/5286 , H01L21/76898 , H01L21/8221 , H01L23/481 , H01L24/05 , H01L27/0694 , H01L2224/05025 , H01L2224/05147 , H01L2224/05157 , H01L2224/05176
摘要： Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.
-
公开(公告)号：US20220384345A1
公开(公告)日：2022-12-01
申请号：US17389622
申请日：2021-07-30
发明人： Saehan Park , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
IPC分类号： H01L23/528 , H01L27/06 , H01L23/48 , H01L21/768 , H01L21/822
摘要： Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.014 秒)
