Invention Grant
- Patent Title: Reliable lateral flux capacitor design
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Application No.: US17034435Application Date: 2020-09-28
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Publication No.: US11881462B2Publication Date: 2024-01-23
- Inventor: Honglin Guo
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L27/08 ; H01L23/522 ; H01L21/82 ; H01L27/01
Abstract:
A semiconductor device includes an impedance having a first port and a second port located over a semiconductor substrate. The impedance includes at least one metal-insulator-metal (MIM) lateral flux capacitor (LFC) pair. Each LFC pair includes a first LFC connected in series with a second LFC. A terminal of the first LFC is connected to the first port, and a terminal of the second LFC is connected to the second port. Optionally the device further includes circuitry formed over the semiconductor substrate, wherein the circuitry is configured to implement a circuit function in cooperation with the impedance.
Public/Granted literature
- US20210098394A1 RELIABLE LATERAL FLUX CAPACITOR DESIGN Public/Granted day:2021-04-01
Information query
IPC分类:
