Invention Grant
- Patent Title: Gate structures with air gap isolation features
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Application No.: US17386062Application Date: 2021-07-27
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Publication No.: US11881506B2Publication Date: 2024-01-23
- Inventor: Johnatan A. Kantarovsky , Mark D. Levy , Brett T. Cucci , Jeonghyun Hwang , Siva P. Adusumilli
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US NY Malta
- Agency: Calderon Safran & Cole P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/778 ; H01L29/66 ; H01L21/8234
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The structure includes: a gate structure comprising a horizontal portion and a substantially vertical stem portion; and an air gap surrounding the substantially vertical stem portion and having a curved surface under the horizontal portion.
Public/Granted literature
- US20230037420A1 GATE STRUCTURES WITH AIR GAP ISOLATION FEATURES Public/Granted day:2023-02-09
Information query
IPC分类:
