- 专利标题： Deposition method and deposition apparatus
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申请号： US17804174申请日： 2022-05-26
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公开(公告)号： US11885015B2公开(公告)日： 2024-01-30
- 发明人: Katsumasa Yamaguchi , Tsubasa Yokoi
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP 21094462 2021.06.04
- 主分类号： C23C16/56
- IPC分类号： C23C16/56 ; C23C16/40 ; C23C16/52
摘要：
A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.
公开/授权文献
- US20220389573A1 DEPOSITION METHOD AND DEPOSITION APPARATUS 公开/授权日：2022-12-08
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