Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US17678392Application Date: 2022-02-23
-
Publication No.: US11887840B2Publication Date: 2024-01-30
- Inventor: Min Sung Kang , Hyoung Yol Mun , Jun U Jin , Bo Hyun Kim , Sung Dong Cho , Won Hee Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.
Public/Granted literature
- US20230016186A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-01-19
Information query
IPC分类: