Invention Grant
- Patent Title: Methods and precursors for selective deposition of metal films
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Application No.: US17994932Application Date: 2022-11-28
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Publication No.: US11887847B2Publication Date: 2024-01-30
- Inventor: Kurt Fredrickson , Atashi Basu , Mihaela A. Balseanu , Ning Li
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/34 ; C23C16/40
Abstract:
Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
Public/Granted literature
- US20230170210A1 Methods and Precursors for Selective Deposition of Metal Films Public/Granted day:2023-06-01
Information query
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