公开(公告)号：US20210189562A1

公开(公告)日：2021-06-24

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11887847B2

公开(公告)日：2024-01-30

申请号：US17994932

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela A. Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US20230170210A1

公开(公告)日：2023-06-01

申请号：US17994932

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela A. Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US11821085B2

公开(公告)日：2023-11-21

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/02175

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US20190316256A1

公开(公告)日：2019-10-17

申请号：US16382643

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US20240052487A1

公开(公告)日：2024-02-15

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  H01L21/02175 ,  H01L21/0228 ,  C23C16/45527

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11515151B2

公开(公告)日：2022-11-29

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US20200312653A1

公开(公告)日：2020-10-01

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/04 ,  C23C16/455

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.