Invention Grant
- Patent Title: Double-sided partial molded SIP module
-
Application No.: US17447029Application Date: 2021-09-07
-
Publication No.: US11887863B2Publication Date: 2024-01-30
- Inventor: HunTeak Lee , Gwang Kim , Junho Ye
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: PATENT LAW GROUP: Atkins and Associates, P.C.
- Agent Brian M. Kaufman; Robert D. Atkins
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L23/60 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L23/498 ; H01L23/31

Abstract:
A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.
Public/Granted literature
- US20230074430A1 Double-Sided Partial Molded SIP Module Public/Granted day:2023-03-09
Information query
IPC分类: