公开(公告)号：US12136759B2

公开(公告)日：2024-11-05

申请号：US17452855

申请日：2021-10-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  KyoungHee Park ,  KyungHwan Kim ,  SeungHyun Lee ,  SangJun Park

IPC: H05K1/18 ,  H01L21/56 ,  H01L23/31 ,  H01L23/36 ,  H01L23/552 ,  H01Q1/22 ,  H05K3/34 ,  H01L23/498 ,  H01L25/16 ,  H01R12/71

Abstract: A semiconductor device has a PCB with an antenna and a semiconductor package mounted onto the PCB. An epoxy molding compound bump is formed or disposed over the PCB opposite the semiconductor package. A first shielding layer is formed over the PCB. A second shielding layer is formed over the semiconductor package. A board-to-board (B2B) connector is disposed on the PCB or as part of the semiconductor package. A conductive bump is disposed between the semiconductor package and PCB.

公开(公告)号：US12046564B2

公开(公告)日：2024-07-23

申请号：US18309951

申请日：2023-05-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3107 ,  H01L24/09 ,  H01L24/17

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US11676911B2

公开(公告)日：2023-06-13

申请号：US17645257

申请日：2021-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3107 ,  H01L24/09 ,  H01L24/17

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US11652088B2

公开(公告)日：2023-05-16

申请号：US17452824

申请日：2021-10-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  SungSoo Kim ,  HeeSoo Lee

IPC: H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/538 ,  H01L25/16 ,  H01L25/10 ,  H01L23/552 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L25/0657 ,  H01L23/538 ,  H01L23/552 ,  H01L24/11 ,  H01L24/17 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11464 ,  H01L2924/00014 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/1134 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/03462 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/03

Abstract: A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

公开(公告)号：US20230140748A1

公开(公告)日：2023-05-04

申请号：US17452855

申请日：2021-10-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  KyoungHee Park ,  KyungHwan Kim ,  SeungHyun Lee ,  SangJun Park

IPC: H01Q1/22 ,  H01L23/552 ,  H05K1/18 ,  H05K3/34

Abstract: A semiconductor device has a PCB with an antenna and a semiconductor package mounted onto the PCB. An epoxy molding compound bump is formed or disposed over the PCB opposite the semiconductor package. A first shielding layer is formed over the PCB. A second shielding layer is formed over the semiconductor package. A board-to-board (B2B) connector is disposed on the PCB or as part of the semiconductor package. A conductive bump is disposed between the semiconductor package and PCB.

公开(公告)号：US11244908B2

公开(公告)日：2022-02-08

申请号：US16181619

申请日：2018-11-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US11189598B2

公开(公告)日：2021-11-30

申请号：US16570165

申请日：2019-09-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  SungSoo Kim ,  HeeSoo Lee

IPC: H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/538 ,  H01L25/16 ,  H01L25/10 ,  H01L23/552 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

公开(公告)号：US20210151386A1

公开(公告)日：2021-05-20

申请号：US17163776

申请日：2021-02-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20200219835A1

公开(公告)日：2020-07-09

申请号：US16821093

申请日：2020-03-17

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  OhHan Kim ,  HeeSoo Lee ,  DaeHyeok Ha ,  Wanil Lee

IPC: H01L23/00 ,  H01L23/538

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

公开(公告)号：US20240183026A1

公开(公告)日：2024-06-06

申请号：US18440068

申请日：2024-02-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  HunTeak Lee ,  Sell Jung ,  HeeSoo Lee

IPC: C23C14/50 ,  C23C14/34 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552

CPC classification number: C23C14/50 ,  C23C14/34 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025

Abstract: A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.