- Patent Title: Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers
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Application No.: US17382399Application Date: 2021-07-22
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Publication No.: US11887894B2Publication Date: 2024-01-30
- Inventor: Francisco Javier Santos Rodriguez , Günter Denifl , Tobias Hoechbauer , Martin Huber , Wolfgang Lehnert , Roland Rupp , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2018111450.8 2018.05.14
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/18
Abstract:
A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.
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