公开(公告)号：US20210351077A1

公开(公告)日：2021-11-11

申请号：US17382399

申请日：2021-07-22

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Günter Denifl ,  Tobias Hoechbauer ,  Martin Huber ,  Wolfgang Lehnert ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/78 ,  H01L21/02

Abstract: A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

公开(公告)号：US20230127556A1

公开(公告)日：2023-04-27

申请号：US17743006

申请日：2022-05-12

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Alexander Binter ,  Tobias Hoechbauer ,  Martin Huber ,  Iris Moder ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/288 ,  H01L21/78

Abstract: A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.

公开(公告)号：US11107732B2

公开(公告)日：2021-08-31

申请号：US16410724

申请日：2019-05-13

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Guenter Denifl ,  Tobias Franz Wolfgang Hoechbauer ,  Martin Huber ,  Wolfgang Lehnert ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/78 ,  H01L21/02

Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

公开(公告)号：US12249504B2

公开(公告)日：2025-03-11

申请号：US17743006

申请日：2022-05-12

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Alexander Christian Binter ,  Tobias Hoechbauer ,  Martin Huber ,  Iris Moder ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/288 ,  H01L21/78

Abstract: pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).

公开(公告)号：US11887894B2

公开(公告)日：2024-01-30

申请号：US17382399

申请日：2021-07-22

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Günter Denifl ,  Tobias Hoechbauer ,  Martin Huber ,  Wolfgang Lehnert ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/18

CPC classification number: H01L21/7813 ,  H01L21/02016 ,  H01L21/185 ,  H01L21/7806

Abstract: A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.