Invention Grant
- Patent Title: Semiconductor devices, semiconductor device packages and method for manufacturing the same
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Application No.: US17684375Application Date: 2022-03-01
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Publication No.: US11887943B2Publication Date: 2024-01-30
- Inventor: Wen Hung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L23/00 ; H01L23/498 ; H01L21/48

Abstract:
A capacitor structure includes a first metal layer, a first metal oxide layer, a second metal oxide layer, a first conductive member, a second conductive member and a metal composite structure. The first metal layer has a first surface and a second surface opposite the first surface. The first metal oxide layer is formed on the first surface of the first metal layer. The second metal oxide layer is formed on the second surface of the first metal layer. The first conductive member penetrates through the capacitor structure and is electrically isolated from the first metal layer. The second conductive member is electrically connected to the first metal layer. The metal composite structure is disposed between the second conductive member and the first metal layer.
Public/Granted literature
- US20220189887A1 SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE PACKAGES AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-06-16
Information query
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